Protection circuit of semiconductor device

A protection circuit of a semiconductor device, comprising:

• a high electron mobility transistor as a semiconductor switching element that is connected to a load and turns on or off an electric power supply to the load;
• and
• a protecting element that includes:
• a thyristor connected in a forward direction and a first resistor connected in series to the thyristor between a drain and a gate of the high electron mobility transistor;
• and
• a second resistor and an interrupter connected in series to the second resistor between a source and the gate of the high electron mobility transistor,
• wherein the interrupter interrupts a flow of a current between the drain and the gate of the high electron mobility transistor when the thyristor is turned off, and
• wherein the interrupter permits the flow of the current between the drain and the gate of the high electron mobility transistor when the thyristor is turned on;
• wherein a drain voltage of the high electron mobility transistor when turning off the high electron mobility transistor is clamped at a clamp voltage equal to a forward breakdown voltage of the thyristor.