Contact structure

A contact structure for a deep trench capacitor (DTC), comprising:

• a substrate region comprising a first trench region, a first landing region, and a second trench region, the first landing region between the first trench region and the second trench region;
• a first dielectric region above and in contact with at least some of the substrate region, at least some of the first dielectric region in at least one of the first trench region or the second trench region;
• an electrically conductive first region above and in contact with at least some of the first dielectric region, at least some of the electrically conductive first region in at least one of the first trench region or the second trench region;
• a second region above at least some of the electrically conductive first region, at least some of the second region in at least one of the first trench region or the second trench region;
• a first contact landing vertically coincident with the first trench region and in contact with the second region;
• a second contact landing vertically coincident with the second trench region and in contact with the second region;
• a third contact landing vertically coincident with the first landing region and in contact with the electrically conductive first region;
• a second dielectric region in contact with a top surface of the second region and in contact with a sidewall of the second region;
• and
• a third dielectric region in contact with a top surface of the second dielectric region.

A contact structure for a deep trench capacitor (DTC), comprising:

• a substrate region comprising:
• a landing region between a first trench region and a second trench region of a substrate;
• a second landing region between the second trench region and a third trench region of the substrate;
• a first dielectric region above and in contact with at least some of the substrate region;
• a first contact landing vertically coincident with the landing region and in contact with a first region above and in contact with at least some of the first dielectric region to form a first electrical interconnect with the first region;
• a second dielectric region above and in contact with at least some of the first region;
• a second contact landing vertically coincident with the first trench region and in contact with a second region above the first region to form a second electrical interconnect with the second region;
• a third contact landing vertically coincident with the second landing region and in contact with the substrate to form a third electrical interconnect with the substrate;
• a first silicon nitride layer in contact with a top surface of the second region;
• and
• a second silicon nitride layer in contact with a sidewall of the first silicon nitride layer and a sidewall of the second region.