Three capacitor stack and associated methods

A capacitor device, the capacitor device comprising:

• a first capacitor stack that includes a first plurality of layers of reference electrodes interleaved with first capacitor electrodes;
• a second capacitor stack on the first capacitor stack that includes a second plurality of layers of reference electrodes interleaved with second capacitor electrodes;
• and
• a third capacitor stack on the second capacitor stack that includes a reference electrode and a third capacitor electrode, wherein a respective layer of dielectric material is formed between the reference electrodes and the first capacitor electrodes, the second capacitor electrodes, and the third capacitor electrode.

A method, comprising:

• forming a first capacitor stack that includes a first plurality of layers of reference electrodes interleaved with first capacitor electrodes;
• forming a second capacitor stack on the first capacitor stack that includes a second plurality of layers of reference electrodes interleaved with second capacitor electrodes;
• and
• forming a third capacitor stack on the second capacitor stack that includes a reference electrode and a third capacitor electrode, wherein a respective layer of dielectric material is formed between the reference electrodes and the first capacitor electrodes, the second capacitor electrodes, and the third capacitor electrode.