Back to results
US 9,960,207 B1Granted
Spin-selective electron relay
AssigneeGlobalfoundries Inc.
InventorSunit S. Mahajan
Life of this patent
Estimating the term…
Abstract
Structures including a spin torque transfer magnetic tunnel junction (MTJ) stack and methods for fabricating same. A first contact is coupled with a first portion of a free layer of the MTJ stack, and a second contact is coupled with a second portion of the free layer of the MTJ stack. The free layer is laterally arranged between the first contact and the second contact.
Claims20
A device structure comprising:
- a magnetic tunnel junction (MTJ) stack including a free layer;
- a bit line coupled with the free layer of the MTJ stack, the bit line having a first side edge and a second side edge opposite from the first side edge;
- a first contact coupled with a first portion of the free layer;
- and
- a second contact coupled with a second portion of the free layer,
- wherein the free layer is laterally arranged between the first contact and the second contact, the first contact is positioned adjacent to the first side edge of the bit line, and the second contact is positioned adjacent to the second side edge of the bit line.
3 more elements
A device structure comprising:
- a magnetic tunnel junction (MTJ) stack including a free layer, a fixed layer, and a tunnel barrier layer between the free layer and the fixed layer;
- a first contact coupled with a first portion of the free layer;
- a second contact coupled with a second portion of the free layer;
- and
- an interconnect level including a dielectric layer,
- wherein the free layer is laterally arranged between the first contact and the second contact, the MTJ stack is located in the interconnect level, the first contact is located in a first via formed in the dielectric layer adjacent to an exterior of the free layer, the second contact is located in a second via formed in the dielectric layer adjacent to an exterior of the free layer, and the first via and the second via penetrate from a top surface of the dielectric layer to a depth in the dielectric layer that is shallower than a plane containing an interface between the free layer and the tunnel barrier layer.
3 more elements
A method comprising:
- forming a magnetic tunnel junction (MTJ) stack including a free layer;
- forming a bit line coupled with the free layer of the MTJ stack;
- forming a first contact coupled with a first portion of the free layer;
- and
- forming a second contact coupled with a second portion of the free layer,
- wherein the free layer is laterally arranged between the first contact and the second contact, the bit line has a first side edge and a second side edge opposite from the first side edge, the first contact is positioned adjacent to the first side edge of the bit line, and the second contact is positioned adjacent to the second side edge of the bit line.
3 more elements
Dependencies are inferred from the claim text.