US 9,960,178 B2Granted

Semiconductor memory device and method for manufacturing same

AssigneeToshiba Memory Corporation

InventorsTomoya Kawai, Yoshiaki Fukuzumi, Hideaki Aochi

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Abstract

According to one embodiment, a semiconductor memory device includes a stacked body and a column. The stacked body includes a plurality of electrode layers. The column includes a semiconductor channel, a charge storage film, and a doped silicon layer. The semiconductor channel extends in the stacking direction. The semiconductor channel is a polycrystalline. An average grain size of crystals in a polycrystalline is not less than a film thickness of the semiconductor channel. The charge storage film is provided between the semiconductor channel and the electrode layers. The doped silicon layer contains a metal element and an impurity other than a metal element. The doped silicon layer is in contact with a top end of the semiconductor channel.

Claims13

Dependent claims

A semiconductor memory device comprising:

a stacked body including a plurality of electrode layers, an insulator being interposed between the electrode layers;
and
a column extending in a stacking direction in the stacked body;
the column including
a semiconductor channel extending in the stacking direction, the semiconductor channel being a polycrystalline, an average grain size of crystals in the polycrystalline being not less than a film thickness of the semiconductor channel, the film thickness being a thickness along a direction perpendicular to an extending direction of the semiconductor channel,
a charge storage film provided between the semiconductor channel and one of the electrode layers, and
a doped silicon layer containing a metal element and a non-metallic impurity, the doped silicon layer being in direct contact with a top end of the semiconductor channel.

4 more elements

Dependencies are inferred from the claim text.