Semiconductor device and manufacturing method of the same
AssigneeSK hynix Inc.
InventorJung Ryul Ahn
Life of this patent
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Abstract
A semiconductor device includes a substrate including a cell region and a peripheral region, a cell stacked structure stacked on the substrate in the cell region, a channel layer in one structure penetrating the cell stacked structure, a driving transistor formed in the peripheral region, and a plug structure coupled to the driving transistor and including a stacking structure of at least two contact plugs shorter than the channel layer, wherein each of the contact plugs is arranged at a same height as a part of the cell stacked structure.
Claims13
A method of manufacturing a semiconductor device, the method comprising:
- alternately stacking first and second material layers on a substrate in which a driving transistor is arranged;
- forming first and second lower buried layers penetrating the first and second material layers and spaced apart from each other, wherein the first and second lower buried layers are formed at the same time;
- alternately stacking third and fourth material layers on the first and second material layers penetrated by the first and second lower buried layers;
- forming a first upper through hole and a second upper through hole penetrating the third and fourth material layers and exposing the first and second lower buried layers, respectively, wherein the first and second upper through holes are formed at the same time;
- and
- forming an upper buried layer in the first upper through hole while leaving the second lower buried layer exposed through the second upper through hole.
A method of manufacturing a semiconductor device, the method comprising:
- alternately stacking first and second material layers on a substrate in which a driving transistor is arranged;
- forming first and second lower buried layers penetrating the first and second material layers and spaced apart from each other, wherein the first lower buried layer is coupled to the driving transistor, wherein the first and second lower buried layers are formed at the same time;
- alternately stacking third and fourth material layers on the first and second material layers penetrated by the first and second lower buried layers;
- forming a first upper through hole and a second upper through hole penetrating the third and fourth material layers and exposing the first and second lower buried layers, respectively, wherein the first and second upper through holes are formed at the same time;
- and
- forming an upper buried layer in the first upper through hole while leaving the second lower buried layer exposed through the second upper through hole.
Dependencies are inferred from the claim text.