US 9,960,118 B2 · Contact using multilayer liner

Abstract

An opening is formed within a substrate made of a silicon material, and a cleaning process is performed; after which, the bottom and walls of the opening are contaminated with oxygen and fluorine particles. A lower blocking layer is formed within the opening, and the lower blocking layer contacts the bottom and walls of the opening. Also, a middle liner layer is formed within the opening, and the middle liner layer contacts the lower blocking layer. Additionally, an upper blocking layer is formed within the opening, and the upper blocking layer contacts the middle liner layer. Further, a conductor layer is formed within the opening, and the conductor layer contacts the upper blocking layer. The lower blocking layer prevents the fluorine particles from affecting the other layers.

Claims14

Dependent claims

A device comprising:

a substrate of a multi-layer integrated circuit device, said substrate comprising silicon;
an opening within the substrate, and a surface of the opening is contaminated with oxygen and fluorine particles;
a lower blocking layer within the opening, and the lower blocking layer contacts the surface of the opening;
a middle liner layer within the opening, and the middle liner layer contacts the lower blocking layer;
an upper blocking layer within the opening, the upper blocking layer contacts the middle liner layer, and the middle liner layer is between the lower blocking layer and the upper blocking layer;
and
a conductor layer within the opening, and the conductor layer contacts the upper blocking layer and comprises a conductive contact within the multi-layer integrated circuit device.

4 more elements

A device comprising:

a substrate of a multi-layer integrated circuit device, said substrate comprising silicon, and the substrate has a surface;
an opening within the substrate, the opening has opening walls perpendicular to the surface of the substrate, the opening has a bottom parallel to the surface of the substrate, the bottom of the opening is positioned distal to the surface of the substrate, and the bottom of the opening and the opening walls are contaminated with oxygen and fluorine particles;
a lower blocking layer within the opening, and the lower blocking layer contacts the bottom of the opening and the opening walls;
a middle liner layer within the opening, and the middle liner layer contacts the lower blocking layer;
an upper blocking layer within the opening, the upper blocking layer contacts the middle liner layer, and the middle liner layer is between the lower blocking layer and the upper blocking layer;
and
a conductor layer within the opening, and the conductor layer contacts the upper blocking layer and comprises a conductive contact within the multi-layer integrated circuit device.

4 more elements

Dependencies are inferred from the claim text.

Contact using multilayer liner

Life of this patent

Contact using multilayer liner

Life of this patent

Abstract

Claims14