Super-resolution imaging photolithography

A method for super-resolution imaging photolithography, comprising:

• forming illumination light containing a high-frequency spatial spectrum in accordance with a Surface Plasmon (SP) wave illumination mode and/or a high Numerical Aperture (NA) illumination mode;
• using the illumination light to illuminate a mask pattern, resulting in light transmitted through the mask pattern, wherein a high-frequency evanescent wave component of spatial spectrum information is converted to a low-frequency evanescent wave component for the transmitted light;
• and
• projecting the transmitted light through a certain gap onto a substrate to image the mask pattern on the substrate on which at least an imaging film, a photosensitive layer, and a reflective layer are stacked in sequence,
• wherein forming the illumination light comprises forming SP wave illumination light by receiving far field illumination light beams which are incident symmetrically in certain directions,
• wherein the forming the SP wave illumination comprises causing the far field illumination light beams to pass through an excitation layer, the excitation layer satisfies equations (1) and (2):
• 2d×(ds×n×sinθ+λ0)=λ0×ds (1)
• λsp×(ds×n×sinθ+λ0)=λ0×ds (2)
• where d denotes a center-to-center pitch of dense lines in the mask pattern, ds denotes a grating period of the excitation layer, θ denotes an incident angle of a central light ray of the far field illumination light beam in a substrate for the mask, n denotes a refractive index of the mask substrate, λ0 denotes a center wavelength of the far field illumination light beam, and λsp denotes the wavelength of the excited SP.