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AssigneeIndustry-University Cooperation Foundation Hanyang University
InventorsJinho Ahn, Jaeuk Lee, Seongchul Hong, Seungmin Lee, Kilbock Lee, Jungsik Kim, Junghwan Kim
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A pellicle for EUV lithography is provided. The pellicle for EUV lithography may improve strength of a pellicle film by having a strength reinforcing layer including a first coupling layer and a carbon nanostructure disposed on a first inorganic layer, the first coupling layer here increase coupling strength between the first inorganic layer and the strength reinforcing layer, and a strength reinforcing layer including a carbon nanostructure. Also, a pellicle for EUV lithography according to another embodiment and a method of fabricating the same are provided. The pellicle for EUV lithography includes a plurality of holes and is a porous thin film made of a material with an extinction coefficient less than or equal to 0.02, and a diameter of the holes is less than or equal to 1 μm. Accordingly, improved strength is achievable because thickness may be made large with still having high EUV transmission.
A pellicle for EUV lithography, comprising:
A pellicle for EUV lithography which is a porous thin film pellicle including a plurality of holes and a material with an extinction coefficient less than or equal to 0.02, wherein a diameter of the holes is less than or equal to 1 μm.
A method of fabricating a pellicle for EUV lithography, the method comprising:
Dependencies are inferred from the claim text.