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US 9,956,594 B2Granted
Substrate processing method
AssigneeSCREEN Holdings Co., Ltd.
InventorsAtsuyasu Miura, Naoki Sawazaki
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AssigneeSCREEN Holdings Co., Ltd.
InventorsAtsuyasu Miura, Naoki Sawazaki
Estimating the term…
A substrate processing method includes a substrate holding step of holding a substrate horizontally, a liquid droplet discharging step wherein liquid droplets of an organic solvent, formed by mixing the organic solvent and a gas, are discharged from a double-fluid nozzle toward a predetermined discharge region within an upper surface of the substrate, and a liquid film forming step, executed before the liquid droplet discharging step, of supplying the organic solvent to the double fluid nozzle without supplying the gas, so as to discharge the organic solvent in a continuous stream mode from the double-fluid nozzle to form a liquid film of the organic solvent covering the discharge region on the upper surface of the substrate.
A substrate processing method comprising:
Dependencies are inferred from the claim text.
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Apparatus for fluid treatment: for cleaning followed by drying, rinsing, stripping, blasting or the like
During, before or after processing of insulating materials: the processing being a planarisation of insulating layers
For wet cleaning or washing: using mainly spraying means, e.g. nozzles
Generic processes or apparatus for the manufacture or treatment of devices covered
About 9 years 2 months of term left · ends 22 Dec 2035 (estimated)
1. Field of the Invention
The present invention relates to a substrate processing method for processing a substrate by using an organic solvent. Examples of substrates to be processed include semiconductor wafers, substrates for liquid crystal displays, substrates for plasma displays, substrates for FEDs (Field Emission Displays), substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, substrates for solar cells, etc.
2. Description of Related Art
FIG. 1 is a diagram of a substrate processing apparatus which executes a substrate processing method according to a first preferred embodiment of the present invention as viewed from a horizontal direction.
FIG. 2A is an illustrative sectional view of the arrangement of a double-fluid nozzle included in the substrate processing apparatus.
FIG. 2B is a block diagram for explaining the electrical structure of the substrate treatment apparatus shown in FIG. 1.
FIG. 1 is a diagram of a substrate processing apparatus 1 which executes a substrate processing method according to a first preferred embodiment of the present invention as viewed from a horizontal direction. FIG. 2A is an illustrative sectional view of the arrangement of a double-fluid nozzle 16 included in the substrate processing apparatus 1.
The substrate processing apparatus 1 is a single substrate processing type apparatus arranged to perform a cleaning processing on a major surface (upper surface) at a device formation region side of a substrate W, such as a silicon substrate 61 (see FIG. 3). The substrate processing apparatus 1 includes a box-shaped processing chamber 2 having an internal space, a spin chuck (substrate holding unit) 3 holding a single substrate W in a horizontal attitude inside the processing chamber 2 and rotating the substrate W around a vertical rotational axis A1 passing through the center of the substrate W, a double-fluid nozzle 16 arranged to discharge liquid droplets of IPA that is an example of an organic solvent onto an upper surface of the substrate W held by the spin chuck 3, an organic solvent supplying unit (first organic solvent supplying unit) 4 arranged to supply IPA to the double-fluid nozzle 16, a gas supplying unit (gas supplying unit) 80 arranged to supply nitrogen gas as an example of a gas to the double-fluid nozzle 16, a cylindrical processing cup 5 surrounding the spin chuck 3, and a controller (control unit) 7 controlling operations of apparatuses and opening/closing of valves provided in the substrate processing apparatus 1.
The processing chamber 2 includes a box-shaped partition wall 8, an FFU (fan filter unit) 9 as a blower unit delivering clean air from an upper portion of the partition wall 8 into an interior of the partition wall 8 (corresponding to an interior of the processing chamber 2), and an exhaust apparatus 10 expelling gas inside the processing chamber 2 from a lower portion of the partition wall 8. The spin chuck 3 and the double-fluid nozzle 16 are housed and disposed within the partition wall 8.