US 9,954,133 B1Granted

P-type chalcogenide and N-type silicon heterojunction infrared photodiodes and method of manufacturing thereof

AssigneeHRL Laboratories, LLC

InventorsJeong-Sun Moon, Hwa Chang Seo

Life of this patent

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Abstract

A photodetector comprising a region of a p-type phase-change chalcogenide material forming a heterojunction with a region of n-type Silicon; wherein the p-type phase-change chalcogenide material comprises one of GeTe and SbTe.

Claims12

Dependent claims

A photodetector comprising:

a region of a p-type phase-change chalcogenide material forming a heterojunction with a region of n-type Silicon;
wherein the p-type phase-change chalcogenide material comprises one of GeTe and SbTe.

Dependencies are inferred from the claim text.

Facts

Application: 15/406,566Filed 13 Jan 2017 · us provisional application
Priority: 15 Jan 2016
Granted: 24 Apr 2018
Term ends: Not estimatedThe source records don’t support an estimate.

Classification15 codes

H10F 30/222
The devices having only one potential barrier, e.g. photodiodes: the potential barrier being a PN heterojunction
G03C 1/705
Photosensitive materials: compositions containing chalcogenides, metals or alloys thereof, as photosensitive substances, e.g. photodope systems
H10F 10/16
Having potential barriers: photovoltaic cells having only PN heterojunction potential barriers
H10F 10/164
Photovoltaic cells having only PN heterojunction potential barriers: comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe…

Family

Application62/279,525Us provisional application · filed 15 Jan 2016
US 9,954,133 B1This patent

From the US filing history. Foreign family members aren’t listed.

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