Composition for forming a coating type BPSG film, substrate, and patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsSeiichiro Tachibana, Yoshinori Taneda, Rie Kikuchi, Tsutomu Ogihara
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AssigneeShin-Etsu Chemical Co., Ltd.
InventorsSeiichiro Tachibana, Yoshinori Taneda, Rie Kikuchi, Tsutomu Ogihara
Estimating the term…
A composition for forming a coating type BPSG film, containing one or more silicic acid skeletal structures represented by formula (1), one or more phosphoric acid skeletal structures represented by formula (2), one or more boric acid skeletal structures represented by formula (3), and one or more silicon skeletal structures represented by formula (4), wherein the composition contains a coupling between units in formula (4). The composition is capable of forming a BPSG film that has excellent adhesiveness in fine patterning, can be easily wet etched by a removing liquid which does not cause damage to a semiconductor substrate and a coating type organic film or a CVD film mainly consisting of carbon which is required in the patterning process, can maintain the peelability even after dry etching, and can suppress generation of particles by forming it in the coating process.
A composition for forming a BPSG film, comprising:
Dependencies are inferred from the claim text.