US 9,883,129 B2 · Semiconductor device

Abstract

The present invention provides a semiconductor device which enables data compression with a small amount of data. The present invention is a semiconductor device which includes a pixel portion, a memory, a first circuit, and a second circuit. The pixel portion has a function of obtaining imaging data. The first circuit has a function of performing discrete cosine transform on the imaging data, and generating first data. The first data is analog data, and the memory has a function of retaining the first data. The second circuit has a function of performing discrete cosine transform on the first data, and generating second data. The memory includes a first transistor, which includes an oxide semiconductor in a channel formation region, and a second transistor, in which a channel formation region is provided in a Si wafer.

Claims12

Dependent claims

A semiconductor device comprising:

a pixel portion configured to obtain an imaging data;
a first circuit configured to perform discrete cosine transform on the imaging data and generate a first data which is an analog data;
a memory configured to store the first data;
and
a second circuit configured to perform discrete cosine transform on the first data and generate a second data.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

15/274,312Filed 23 Sep 2016

Priority

JP 2015-18804725 Sep 2015

Published

US 2017/0094220 A130 Mar 2017

Granted

30 Jan 2018

Term ends

Not estimatedThe source records don’t support an estimate.

Classification8 codes

H04N 25/77
Addressed sensors, e.g. MOS or CMOS sensors: pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 9/8042
Involving pulse code modulation of the colour picture signal components: involving data reduction
H04N 25/78
Addressed sensors, e.g. MOS or CMOS sensors: readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
H10F 39/80377
The integrated elements comprising a transistor: characterised by the channel of the transistor, e.g. channel having a doping gradient

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims12