US 9,882,348 B2Granted

Induction of force performed by the semiconductor laser diodes

OwnerElio Battista Porcelliinventor

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Abstract

Until now, the laser beam light is the main feature to be provided by semiconductor laser diodes. The highly ordered direct current of charge carriers injected into the active region of these electronic components above the lasing threshold can be used in innovative ways. This attribute is associated with a new theoretical concept when all particles which are part of macroscopic objects are widely coupled to each other via quantum entanglements—it can generate a distance force induction and a self-induction of force. Considering this, a force can be inducted in the external objects—thrusting them—and a force can be inducted in the own semiconductor laser diode structure for its self propulsion.

Claims1

Dependent claims

A method for using a semiconductor laser diode to produce an induction force in other external objects or particles, as well as producing a self-induction force, comprising the steps of:

positioning a projection area of a resonant cavity of the semiconductor laser diode according to its direct current flow direction and external objects and particles;
generating the induction force and the self-induction force above a lasing light current threshold state by the semiconductor laser diode;
and
initiating the induction force to the external objects and particles by the ordered charge carriers of highly concentrated current of the semiconductor laser diode taking into account a preexisting state of generalized quantum entanglements between all parts of the semiconductor laser diode and the external objects and particles.

1 more element

Dependencies are inferred from the claim text.

Facts

Application: 13/919,315Filed 17 Jun 2013
Published: US 2014/0368049 A118 Dec 2014
Granted: 30 Jan 2018
Term ends: Not estimatedThe source records don’t support an estimate.

Classification3 codes

H01S 5/06
Semiconductor lasers: arrangements for controlling the laser output parameters, e.g. by operating on the active medium
H01S 5/02212
Characterised by the shape of the housings: can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
H01S
Devices using the process of light amplification by stimulated emission of radiation

Family

US 2014/0368049 A1Pre-grant publication · published 18 Dec 2014
US 9,882,348 B2This patent

From the US filing history. Foreign family members aren’t listed.

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