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US 9,873,136 B2Granted
Ultrasonic transducer and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsDongsik Shim, Seogwoo Hong, Seokwhan Chung
Life of this patent
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Abstract
An ultrasonic transducer and a method of manufacturing the same are provided. The ultrasonic transducer includes a substrate, a first insulation layer, and a first thin film layer; a plurality of support members formed on the first thin film layer; a second thin film layer supported by the plurality of support members; a cavity between the first thin film layer and the second thin film layer; and a common ground electrode on the second thin film layer.
Claims20
An ultrasonic transducer comprising:
- a substrate;
- a first insulation layer formed on the substrate;
- a first thin film layer provided on the first insulation layer and split into electrically independent elements by at least one insulation unit included in the first thin film layer;
- a plurality of support members provided on the first thin film layer;
- a second thin film layer supported by the plurality of support members;
- a cavity provided between the first thin film layer and the second thin film layer;
- at least one signal electrode pad included in each of the electrically independent elements and formed on the first thin film layer;
- and
- a common ground electrode on the second thin film layer.
6 more elements
A method of manufacturing an ultrasonic transducer, the method comprising:
- forming a first wafer comprising a first substrate, a first insulation layer, and a first thin film layer;
- forming a second insulation layer on the first thin film layer by deposition;
- forming a gap by etching the second insulation layer;
- forming an insulation unit by etching the second insulation layer and the first thin film layer;
- forming a second wafer comprising a second substrate, a third insulation layer, and a second thin film layer;
- changing the gap into a cavity by disposing the second thin film layer of the second wafer on the second insulation layer;
- removing the third insulation layer and the second substrate;
- and
- forming a common ground electrode on the second thin film layer.
6 more elements
Dependencies are inferred from the claim text.