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US 9,870,834 B2Granted
Error characterization and mitigation for 16nm MLC NAND flash memory under total ionizing dose effect
AssigneeCalifornia Institute of Technology
InventorsYue Li, Jehoshua Bruck
Life of this patent
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Abstract
A data device includes a memory having a plurality of memory cells configured to store data values in accordance with a predetermined rank modulation scheme that is optional and a memory controller that receives a current error count from an error decoder of the data device for one or more data operations of the flash memory device and selects an operating mode for data scrubbing in accordance with the received error count and a program cycles count.
Claims16
A data device comprising:
- a memory having a plurality of memory cells configured to store data values in accordance with a predetermined rank modulation scheme;
- and
- a memory controller that receives a current error count from an error decoder of the data device for one or more data operations of the data device and selects an operating mode for data scrubbing in accordance with the received error count and a program cycles count.
A computer method of operating a data device, the method comprising:
- receiving a current error count at a memory controller from an error decoder of the data device for one or more data operations of the data device, the error count indicating errors detected in a memory having a plurality of memory cells configured to store data values in accordance with a predetermined rank modulation scheme;
- and
- selecting an operating mode for data scrubbing in accordance with the received error count and a program cycles count.
Dependencies are inferred from the claim text.