Semiconductor structure and method for manufacturing the same

A semiconductor structure, comprising:

• a semiconductor substrate having a first electrical portion and a second electrical portion;
• the first electrical portion comprising:
• a first semiconductor well;
• a second semiconductor well positioned in the first semiconductor well;
• a third semiconductor well and a fourth semiconductor well positioned in the second semiconductor well;
• a first electrode electrically connected to the third semiconductor well;
• and
• an eighth semiconductor well sandwiched between the second semiconductor well and the fourth semiconductor well;
• the second electrical portion comprising:
• a fifth semiconductor well;
• a semiconductor layer positioned in the fifth semiconductor well, wherein the semiconductor layer has a first portion and a second portion separated from each other;
• a sixth semiconductor well and a seventh semiconductor well positioned in the fifth semiconductor well, wherein the second portion of the semiconductor layer is between the sixth semiconductor well and the seventh semiconductor well;
• and
• a second electrode electrically connected to the seventh semiconductor well;
• and
• a bridged conductive layer connecting the fourth semiconductor well of the first electrical portion and the sixth semiconductor well of the second electrical portion.

A method for manufacturing a semiconductor structure, comprising:

• forming a first semiconductor well and a second semiconductor well in a semiconductor substrate;
• forming a third semiconductor well in the first semiconductor well, and a semiconductor layer in the second semiconductor well, the semiconductor layer having a first portion and a second portion, the first portion being separated from the second portion by a portion of the second semiconductor well;
• forming a fourth semiconductor well in the third semiconductor well;
• forming a fifth semiconductor well in the third semiconductor well, a sixth semiconductor well and a seventh semiconductor well in the second semiconductor well;
• depositing a bridged conductive layer connecting the fifth semiconductor well and the sixth semiconductor well;
• and
• forming a first electrode on the fourth semiconductor well, and a second electrode on the seventh semiconductor well.