US 9,865,740 B2 · Semiconductor device and manufacturing method for the same · patentgrep

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Abstract

An object is to provide a method for manufacturing a highly reliable semiconductor device including thin film transistors which have stable electric characteristics and are formed using an oxide semiconductor. A method for manufacturing a semiconductor device includes the steps of: forming an oxide semiconductor film over a gate electrode with a gate insulating film interposed between the oxide semiconductor film and the gate electrode, over an insulating surface; forming a first conductive film including at least one of titanium, molybdenum, and tungsten, over the oxide semiconductor film; forming a second conductive film including a metal having lower electronegativity than hydrogen, over the first conductive film; forming a source electrode and a drain electrode by etching of the first conductive film and the second conductive film; and forming an insulating film in contact with the oxide semiconductor film, over the oxide semiconductor film, the source electrode, and the drain electrode.

Claims29

Dependent claims

A semiconductor device comprising:

a substrate;
a gate electrode over the substrate;
a first insulating film over the gate electrode, the first insulating film comprising silicon and nitrogen;
a second insulating film over the first insulating film, the second insulating film comprising silicon and oxygen;
an oxide semiconductor film over the second insulating film, the oxide semiconductor film comprising indium and oxygen;
a source electrode over the oxide semiconductor film;
a drain electrode over the oxide semiconductor film;
a third insulating film over the oxide semiconductor film and covering a top surface of the source electrode and a top surface of the drain electrode, and an outer side edge of one of the source electrode and the drain electrode, when viewed in a cross-sectional view of the semiconductor device, the third insulating film comprising silicon and oxygen;
a fourth insulating film made of a silicon nitride film over the third insulating film and covering the outer side edge of the one of the source electrode and the drain electrode, when viewed in the cross-sectional view of the semiconductor device;
and
a pixel electrode over the fourth insulating film, the pixel electrode being electrically connected to one of the source electrode and the drain electrode,
wherein each of the source electrode and the drain electrode comprises a first conductive film and a second conductive film,
wherein the second conductive film is over the first conductive film and is thicker than the first conductive film,
wherein the first conductive film comprises titanium, tungsten, or molybdenum,
wherein the second conductive film comprises a metal with a lower electronegativity than an electronegativity of hydrogen,
wherein the third insulating film is in contact with a top surface of the oxide semiconductor film and is thicker than the fourth insulating film, and
wherein the metal is not aluminum.

14 more elements

A semiconductor device comprising:

a substrate;
a gate electrode over the substrate;
a first insulating film over the gate electrode, the first insulating film comprising silicon and nitrogen;
a second insulating film over the first insulating film, the second insulating film comprising silicon, oxygen, and nitrogen;
an oxide semiconductor film over the second insulating film, the oxide semiconductor film comprising indium and oxygen;
a source electrode over the oxide semiconductor film;
a drain electrode over the oxide semiconductor film;
a third insulating film over the oxide semiconductor film and covering a top surface of the source electrode and a top surface of the drain electrode, and an outer side edge of one of the source electrode and the drain electrode, when viewed in a cross-sectional view of the semiconductor device, the third insulating film comprising silicon, oxygen, and nitrogen;
a fourth insulating film made of a silicon nitride film over the third insulating film and covering the outer side edge of the one of the source electrode and the drain electrode, when viewed in the cross-sectional view of the semiconductor device;
and
a pixel electrode over the fourth insulating film, the pixel electrode being electrically connected to one of the source electrode and the drain electrode,
wherein each of the source electrode and the drain electrode comprises a first conductive film and a second conductive film,
wherein the second conductive film is over the first conductive film and is thicker than the first conductive film,
wherein the first conductive film comprises titanium, tungsten, or molybdenum,
wherein the second conductive film comprises a metal with a lower electronegativity than an electronegativity of hydrogen,
wherein the third insulating film is in contact with a top surface of the oxide semiconductor film and is thicker than the fourth insulating film, and
wherein the metal is not aluminum.

14 more elements

A semiconductor device comprising:

a substrate;
a gate electrode over the substrate;
a first insulating film over the gate electrode, the first insulating film comprising silicon and nitrogen;
a second insulating film over the first insulating film, the second insulating film comprising silicon and oxygen;
an oxide semiconductor film over the second insulating film, the oxide semiconductor film comprising indium and oxygen;
a source electrode over the oxide semiconductor film;
a drain electrode over the oxide semiconductor film;
a third insulating film over the oxide semiconductor film and covering a top surface of the source electrode and a top surface of the drain electrode, the third insulating film comprising silicon and oxygen;
a fourth insulating film made of a silicon nitride film over the third insulating film;
a pixel electrode over the fourth insulating film, the pixel electrode being electrically connected to one of the source electrode and the drain electrode;
and
a fifth insulating film over and in contact with the oxide semiconductor film, the fifth insulating film being below and in contact with each of the source electrode, the drain electrode, and the third insulating film, and the fifth insulating film comprising silicon and oxygen,
wherein each of the source electrode and the drain electrode comprises a first conductive film and a second conductive film,
wherein the second conductive film is over the first conductive film and is thicker than the first conductive film,
wherein the first conductive film comprises titanium, tungsten, or molybdenum,
wherein the second conductive film comprises a metal with a lower electronegativity than an electronegativity of hydrogen,
wherein the fourth insulating film is in contact with the third insulating film, and
wherein a layer comprising the third insulating film and the fifth insulating film is thicker than the fourth insulating film.

15 more elements

A semiconductor device comprising:

a substrate;
a gate electrode over the substrate;
a first insulating film over the gate electrode, the first insulating film comprising silicon and nitrogen;
a second insulating film over the first insulating film, the second insulating film comprising silicon, oxygen, and nitrogen;
an oxide semiconductor film over the second insulating film, the oxide semiconductor film comprising indium and oxygen;
a source electrode over the oxide semiconductor film;
a drain electrode over the oxide semiconductor film;
a third insulating film over the oxide semiconductor film and covering a top surface of the source electrode and a top surface of the drain electrode, the third insulating film comprising silicon, oxygen, and nitrogen;
a fourth insulating film made of a silicon nitride film over the third insulating film;
a pixel electrode over the fourth insulating film, the pixel electrode being electrically connected to one of the source electrode and the drain electrode;
and
a fifth insulating film over and in contact with the oxide semiconductor film, the fifth insulating film being below and in contact with each of the source electrode, the drain electrode, and the third insulating film, and the fifth insulating film comprising silicon and oxygen,
wherein each of the source electrode and the drain electrode comprises a first conductive film and a second conductive film,
wherein the second conductive film is over the first conductive film and is thicker than the first conductive film,
wherein the first conductive film comprises titanium, tungsten, or molybdenum,
wherein the second conductive film comprises a metal with a lower electronegativity than an electronegativity of hydrogen,
wherein the fourth insulating film is in contact with the third insulating film, and
wherein a layer comprising the third insulating film and the fifth insulating film is thicker than the fourth insulating film.

15 more elements

A semiconductor device comprising:

a substrate;
a gate electrode over the substrate;
a first insulating film over the gate electrode, the first insulating film comprising silicon and nitrogen;
a second insulating film over the first insulating film, the second insulating film comprising silicon and oxygen;
an oxide semiconductor film over the second insulating film, the oxide semiconductor film comprising indium and oxygen;
a source electrode over the oxide semiconductor film;
a drain electrode over the oxide semiconductor film;
a third insulating film over the oxide semiconductor film and covering a top surface of the source electrode and a top surface of the drain electrode, the third insulating film comprising silicon and oxygen;
a pixel electrode over the third insulating film, the pixel electrode being electrically connected to one of the source electrode and the drain electrode;
and
a fourth insulating film over and in contact with the oxide semiconductor film, the fourth insulating film being below and in contact with each of the source electrode, the drain electrode, and the third insulating film, and the fourth insulating film comprising silicon and oxygen,
wherein each of the source electrode and the drain electrode comprises a first conductive film and a second conductive film,
wherein the second conductive film is over the first conductive film and is thicker than the first conductive film,
wherein the first conductive film comprises titanium, tungsten, or molybdenum,
wherein the second conductive film comprises a metal with a lower electronegativity than an electronegativity of hydrogen, and
wherein the metal is not aluminum.

13 more elements

Dependencies are inferred from the claim text.

Facts

Application: 14/585,953Filed 30 Dec 2014 · continuation
Priority: JP 2009-24225621 Oct 2009
Published: US 2015/0108478 A123 Apr 2015
Granted: 9 Jan 2018
Term ends: Not estimatedThe source records don’t support an estimate.

Classification4 codes

Family

Application12/906,553Parent of this continuation · filed 18 Oct 2010
Application13/552,805Parent of this continuation · filed 19 Jul 2012
US 8,470,650 B2Parent of this continuation · filed 25 Jun 2013
US 2015/0108478 A1Pre-grant publication · published 23 Apr 2015
US 8,946,700 B2Parent of this continuation
US 10,079,307 B2Related patent
US 2011/0092017 A1Published application
US 2012/0280230 A1Published application
US 9,865,740 B2This patent

From the US filing history. Foreign family members aren’t listed.

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