Super junction semiconductor device
AssigneeMagnaChip Semiconductor, Ltd.
InventorsHyuk Woo, Dae Byung Kim, Chang Yong Choi, Ki Tae Kang, Kwang Yeon Jun, Moon Soo Cho, Soon Tak Kwon
Life of this patent
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Abstract
Provided is a super junction semiconductor device. The super junction semiconductor device includes a vertical pillar region located in an active region and horizontal pillar regions located in a termination region that are connected with each other while simultaneously not floating the entire pillar region in the termination region. Thus, a charge compensation difference, generated among pillar regions, is caused to be offset, although the length of the termination region is relatively short.
Claims23
A super junction semiconductor device comprising:
- a vertical pillar region located in an active region;
- a first termination region and a second termination region located surrounding the active region;
- first horizontal pillar regions located in the first termination region;
- and
- second horizontal pillar regions located in the second termination region,
- wherein the first horizontal pillar regions, the second horizontal pillar regions, and the vertical pillar region are connected, and
- wherein edges of the first horizontal pillar regions abut an epi layer.
A super junction semiconductor device, comprising:
- an active region comprising vertical pillar regions and surrounded by a first termination region comprising first horizontal pillar regions and a second termination region comprising second horizontal pillar regions,
- wherein the first horizontal pillar regions, the second horizontal pillar regions, and the vertical pillar regions are connected,
- wherein edges of the first horizontal pillar regions abut an epi layer, and
- wherein the vertical pillar regions in the active region are spaced apart from the first horizontal pillar regions in the first termination region, respectively.
A super junction semiconductor device, comprising:
- vertical pillar regions located in an active region;
- first horizontal pillar regions located in a first termination region;
- second horizontal pillar regions located in a second termination region;
- and
- an epi layer comprising the first horizontal pillar regions, the second horizontal pillar regions, and the vertical pillar region;
- and
- an oxide layer, in the first termination region, disposed contiguously on a portion of the epi layer,
- wherein a top surface of an upper first horizontal pillar region of the first horizontal pillar regions abuts the epi layer and an oxide layer in the first termination region.
Dependencies are inferred from the claim text.