Semiconductor device
AssigneeToshiba Memory Corporation
InventorTakeshi Kamigaichi
Life of this patent
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Abstract
According to one embodiment, a semiconductor device includes a stacked body and a columnar portion. The stacked body includes a plurality of electrode layers stacked with an insulator between the electrode layers. The columnar portion includes a semiconductor body extending in the stacked body in a stacking direction of the stacked body, and a charge storage film provided between the semiconductor body and the electrode layers. The columnar portion includes a first portion with a first diameter, and a second portion with a second diameter smaller than the first diameter. The first portion has a higher concentration of an impurity than a concentration of the impurity of the second portion. The impurity contains at least one of boron, arsenic, and phosphorus.
Claims18
A semiconductor device comprising:
- a first memory cell provided in a stacked body including a plurality of electrode layers stacked with an insulator between the electrode layers, the first memory cell including a first electrode layer of the electrode layers, and a first columnar portion with a first diameter, the first columnar portion including a first portion of a semiconductor body extending in the stacked body in a stacking direction of the stacked body, and a first charge storage portion provided between the first portion of the semiconductor body and the first electrode layer;
- and
- a second memory cell provided in the stacked body, the second memory cell including a second electrode layer of the electrode layers, and a second columnar portion with a second diameter smaller than the first diameter, the second columnar portion including a second portion of the semiconductor body and a second charge storage portion provided between the second portion of the semiconductor body and the second electrode layer,
- the first portion of the semiconductor body of the first columnar portion of the first memory cell having a higher concentration of an impurity than a concentration of the impurity of the second portion of the semiconductor body of the second columnar portion of the second memory cell, the impurity containing at least one of boron, arsenic, and phosphorus,
- the first columnar portion and the second columnar portion further include a core insulating film provided inside the semiconductor body, and
- a metal concentration of the core insulating film of the first columnar portion is higher than a metal concentration of the core insulating film of the second columnar portion.
A semiconductor device comprising:
- a stacked body including a plurality of electrode layers stacked with an insulating layer between the electrode layers;
- and
- a columnar portion including a semiconductor body, a charge storage film, and a core insulating film, the semiconductor body extending in the stacked body in a stacking direction of the stacked body, the charge storage film provided between the semiconductor body and the electrode layers, the core insulating film provided inside the semiconductor body, the columnar portion including a first portion with a first diameter and a second portion with a second diameter smaller than the first diameter, the core insulating film of the first portion having a higher metal concentration than a metal concentration of the core insulating film of the second portion.
Dependencies are inferred from the claim text.