Comparator including a magnetic tunnel junction (MTJ) device and a transistor

A method of operation of a comparator, the method comprising:

• at a device comprising the comparator including a magnetic tunnel junction (MTJ) device having an output coupled to a resistor and to a gate of a transistor, performing:
• adjusting a comparator switching point of the MTJ device to a first comparator switching point value responsive to a first amount of current applied to a field line proximate to the MTJ device;
• switching from outputting a first voltage to outputting a second voltage when a third voltage applied to an input of the comparator increases above a first threshold voltage level, wherein the first threshold voltage level corresponds to a first comparator switching point value of the MTJ device;
• adjusting the comparator switching point of the MTJ device to a second comparator switching point value responsive to a second amount of current applied to the field line;
• and
• switching from outputting the second voltage to outputting the first voltage when the third voltage applied to the input decreases below a second threshold voltage level, wherein the second threshold voltage level corresponds to a second comparator switching point value of the MTJ device.

A method of operation of a comparator, the method comprising:

• adjusting the comparator switching point of a magnetic tunnel junction (MTJ) device of the comparator to a first comparator switching point value responsive to a first amount of current applied to a field line proximate to the MTJ device;
• switching, by the MTJ device, from providing a first particular voltage at an output of the MTJ device to providing a second particular voltage at the output in response to a voltage applied to an input of the MTJ device exceeding a first threshold voltage level, the first threshold voltage level corresponding to a first comparator switching point value of the MTJ device;
• adjusting the comparator switching point of the MTJ device to a second comparator switching point value responsive to a second amount of current applied to the field line;
• and
• switching, by the MTJ device, from providing the second particular voltage at the output to providing the first particular voltage at the output in response to the voltage applied to the input decreasing below a second threshold voltage level, the second threshold voltage level corresponding to a second comparator switching point value of the MTJ device.

An apparatus comprising:

• means for comparing an input voltage to a threshold voltage, the means for comparing including a magnetic tunnel junction (MTJ) device and a transistor, wherein the means for comparing has a hysteresis property associated with multiple transition points that correspond to magnetic switching points of the MTJ device, and wherein an output of the MTJ device is coupled to means for activating a channel region of the transistor and to a resistor;
• and
• means for tuning the magnetic switching points of the MTJ device, the means for tuning configured to:
• tune a means for comparing switching point of the MTJ device to a first means for comparing switching point value responsive to a first amount of current applied to the means for tuning;
• and
• tune the means for comparing switching point of the MTJ device to a second means for comparing switching point value responsive to a second amount of current applied to the means for tuning,
• the magnetic switching points adjustable to tune the MTJ from operation based on a first threshold voltage level pair to operation based on a second threshold voltage level pair,
• wherein at least a portion of the means for tuning is included in the means for comparing.