Nozzle head and apparatus

An apparatus for processing a surface of a substrate, the apparatus comprising:

• a process chamber having inside a gas atmosphere;
• a nozzle head arranged inside the process chamber such that the process chamber is arranged around the nozzle head for subjecting the surface of the substrate to successive surface reactions of at least a first precursor and a second precursor,
• the nozzle head having an output face and comprising:
• one or more first precursor nozzles for subjecting the surface of the substrate to the first precursor, the one or more first precursor nozzles being configured to supply only the first precursor;
• one or more second precursor nozzles for subjecting the surface of the substrate to the second precursor, the one or more second precursor nozzles being configured to supply only the second precursor;
• one or more discharge ports provided to the first and second precursor nozzles for exhausting precursors;
• and
• one or more purge gas channels between the first and second precursor nozzles, wherein:
• the one or more first and second precursor nozzles are separated from each other by the one or more purge gas channels extending between the process chamber and the output face of the nozzle head such that the one or more purge gas channels are open to:
• (i) the gas atmosphere in the process chamber, and (ii) the output face of the nozzle head, thereby providing a passive fluid connection between the one or more purge gas channels and the gas atmosphere inside the process chamber for subjecting the surface of the substrate to purge gas from the process chamber through the one or more purge gas channels to the output face of the nozzle head,
• the first precursor nozzle includes a first open portion open to the output face,
• the second precursor nozzle includes a second open portion open to the output face, and
• the first open portion of the first precursor nozzle, the second open portion of the second precursor nozzle and the outlet of the purge gas channel are arranged on the same plane on the output face.

A method for processing a surface of a substrate with an apparatus comprising a process chamber having inside a gas atmosphere and a nozzle head inside the process chamber, the nozzle head including:

• (i) one or more first precursor nozzles, (ii) one or more second precursor nozzles, and (iii) an output face, the method comprising:
• supplying a first precursor via only the first precursor nozzle for subjecting the surface of the substrate to the first precursor;
• supplying a second precursor via only the second precursor nozzle for subjecting the surface of the substrate to the second precursor;
• subjecting the surface of the substrate to purge gas be-tween the first and second precursors;
• and
• exhausting precursors and purge gas through the precursor nozzles,
• wherein the surface of the substrate is subjected to purge gas by providing purge gas passively from the process chamber having inside the gas atmosphere including purge gas provided through a purge gas channel and through the output face to the surface of the substrate,
• the first precursor nozzle includes a first open portion open to the output face,
• the second precursor nozzle includes a second open portion open to the output face, and
• the first open portion of the first precursor nozzle, the second open portion of the second precursor nozzle and the outlet of the purge gas channel are arranged on the same plane on the output face.