Vapor phase growth method
AssigneeSumitomo Electric Industries, Ltd.
InventorChihoko Mizue
Life of this patent
Estimating the term…
Abstract
A vapor phase growth method is disclosed. The method includes a step of preparing a substrate in a chamber, a first step of absorbing only a first element to the substrate by supplying a first source material into the chamber, a second step of suspending supply of the first source material into the chamber, a third step of absorbing a second element to the substrate by supplying a second source material into the chamber, wherein the supply of the second source material is started while the first source material remains in an atmosphere of the chamber, a fourth step of suspending supply of the second source material into the chamber, and a fifth step of repeating from the first step to the fourth step.
Claims15
A vapor phase growth method comprising:
- a step of introducing a substrate into a chamber;
- a first step of adsorbing only a first element to the substrate by supplying an organometallic material as a first source material into the chamber, wherein, the first step, the chamber has a pressure above a background pressure;
- after the first step, a second step of suspending supply of the first source material into the chamber;
- after the second step, a third step of adsorbing a second element to the substrate by supplying an oxidizing material as a second source material into the chamber, wherein the supply of the second source material is started while the first source material remains in an atmosphere of the chamber and before the pressure in the chamber reaches the background pressure;
- after the third step, a fourth step of suspending supply of the second source material into the chamber;
- and
- a fifth step of repeating from the first step to the fourth step as an atomic layer deposition (ALD) process,
- wherein a duration of the fourth step is longer than that of the second step, and
- wherein the oxidizing material is oxygen or ozone.
A vapor phase growth method comprising:
- a step of introducing a substrate into a chamber;
- a first step of adsorbing only a first element to the substrate by supplying an organometallic material as a first source material into the chamber, wherein, in the first step, the chamber has a pressure above a background pressure;
- after the first step, a second step of suspending supply of the first source material into the chamber;
- after the second step, a third step of adsorbing a second element to the substrate by supplying an oxidizing material as a second source material into the chamber, wherein the supply of the second source material is started while the first source material remains in an atmosphere of the chamber and before the pressure in the chamber reaches the background pressure;
- after the third step, a fourth step of suspending supply of the second source material into the chamber;
- and
- a fifth step of repeating from the first step to the fourth step as an atomic layer deposition (ALD) process,
- wherein the organometallic material is trimethylaluminum and the oxidizing material is oxygen or ozone,
- wherein a film formed from the first element and the second element is an aluminum oxide film, the film being deposited on the substrate, and
- wherein the film includes at least one of carbon whose concentration in the film is not less than 1×1021 cm−3 and hydrogen whose concentration in the film is not less than 5×1020 cm−3.
Dependencies are inferred from the claim text.