Semiconductor structure and fabrication method thereof
AssigneeUnited Microelectronics Corp.
InventorsChih-Kai Hsu, Yu-Hsiang Hung, Ssu-I Fu, Jyh-Shyang Jenq
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Abstract
A method for making a semiconductor device. A substrate having a fin structure is provided. A continuous dummy gate line is formed on the substrate. The dummy gate line strides across the fin structure. A source/drain structure is formed on the fin structure on both sides of the dummy gate line. An interlayer dielectric (ILD) is formed on the dummy gate line and around the dummy gate line. The ILD is polished to reveal a top surface of the dummy gate line. After polishing the ILD, the dummy gate line is segmented into separate dummy gates.
Claims10
A method for making a semiconductor device, comprising:
- providing a substrate having a fin structure thereon;
- forming a continuous dummy gate line on the substrate, wherein the dummy gate line strides across the fin structure;
- forming a source/drain structure on the fin structure on either side of the dummy gate line;
- forming an interlayer dielectric (ILD) on the dummy gate line and around the dummy gate line;
- polishing the ILD to thereby reveal a top surface of the dummy gate line;
- and
- after polishing the ILD, segmenting the dummy gate line into separated dummy gates.
Dependencies are inferred from the claim text.