Deep trench capacitor with metal plate
AssigneeGlobalfoundries Inc.
InventorsAli Khakifirooz, Davood Shahrjerdi, Herbert L. Ho, Kangguo Cheng
Life of this patent
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Abstract
The present disclosure generally relates to semiconductor structures and, more particularly, to a deep trench capacitor, integrated structures and methods of manufacture. The structure includes: a conductive material formed on an underside of an insulator layer and which acts as a back plate of a deep trench capacitor; an inner conductive layer extending through the insulator layer and an overlying substrate; and a dielectric liner between the inner conductive material and the conductive material, and formed on a sidewall of an opening within the insulator layer and the overlying substrate.
Claims19
A structure comprising:
- a conductive material formed on an underside of an insulator layer and which acts as a back plate of a deep trench capacitor;
- an inner conductive layer extending through the insulator layer and an overlying substrate;
- and
- a dielectric liner between the inner conductive layer and the conductive material, and formed on a sidewall of an opening within the insulator layer and the overlying substrate, wherein the dielectric liner comprises a low-k dielectric within the opening of the insulator layer and a high-k dielectric sandwiched between the conductive material and the inner conductive material.
A structure comprising:
- a deep trench capacitor comprising:
- a metal back plate layer which is formed on an underside of an insulator layer and which has a thickness of at least the deep trench capacitor;
- conductive material formed within an opening of the insulator layer and within the metal back plate layer;
- and
- a dielectric liner between the conductive material and the metal back plate layer.
A method, comprising:
- forming a trench in a substrate;
- lining the trench with a dielectric liner;
- filling the trench with a conductive material over the dielectric liner;
- removing the substrate to expose the dielectric liner;
- removing a portion of the exposed dielectric liner;
- depositing a dielectric material in place of the removed portion of the exposed dielectric liner;
- and
- depositing an outer conductive material directly on the dielectric material to form a back plate and sandwiching the dielectric material between the conductive material and the outer conductive material, wherein the dielectric liner is a low-k dielectric material and the dielectric material is a high-k dielectric material.
Dependencies are inferred from the claim text.