Landing pad in peripheral circuit for magnetic random access memory (MRAM)

A memory device comprising:

• a memory cell region comprising a plurality of memory cells, each memory cell including a magnetic tunnel junction (MTJ) memory element having a variable resistance, said MTJ memory element including multiple magnetic layers having magnetization directions that are substantially perpendicular to respective layer planes;
• and
• a peripheral circuit region including:
• a substrate and a bottom contact formed therein;
• a landing pad formed on top of said bottom contact, said landing pad including at least a conductive layer and an insulating layer thereabove with an opening;
• and
• a via partly embedded in said landing pad and directly coupled to said conductive layer through said opening,
• wherein said conductive layer includes one or more magnetic elements.

A memory device comprising:

• a magnetic memory cell region including at least a magnetic tunnel junction (MTJ) memory element having a variable resistance;
• and
• a peripheral circuit region comprising:
• a substrate and a bottom contact formed therein;
• a landing pad comprising a first magnetic layer structure formed on top of said bottom contact and a second magnetic layer structure separated from said first magnetic layer structure by an insulating tunnel junction layer, each of said insulating tunnel junction layer and said second magnetic layer structure having an opening aligned to each other;
• and
• a via partly embedded in said landing pad and directly coupled to said first magnetic layer structure through said openings.

A memory device including:

• a memory cell region comprising a plurality of memory cells, each memory cell including a magnetic tunnel junction (MTJ) memory element having a variable resistance;
• and
• a peripheral circuit region comprising:
• a substrate and a bottom contact formed therein;
• a landing pad formed on top of said bottom contact, said landing pad comprising a conductive layer and a degraded insulating layer formed thereon, thereby allowing electric current to conduct through said landing pad;
• and
• a via formed on top of said landing pad,
• wherein each MTJ memory element comprises multiple magnetic layers having magnetization directions that are substantially perpendicular to respective layer planes, said conductive layer includes one or more magnetic elements.