Active device

An active device, disposed on a substrate, wherein the active device comprises:

• a first poly-silicon semiconductor layer and a second poly-silicon semiconductor layer, disposed on the substrate, wherein the first poly-silicon semiconductor layer has a first channel region and the second poly-silicon semiconductor layer has a second channel region;
• a first insulating layer, covering the first poly-silicon semiconductor layer, the second poly-silicon semiconductor layer, and the substrate;
• a first gate electrode and a second gate electrode, disposed on the first insulating layer and respectively corresponding to the first channel region and the second channel region;
• a second insulating layer, covering the first gate electrode, the second gate electrode, and the first insulating layer, wherein the second insulating layer has a first through hole and a second through hole, and the first through hole and the second through hole are disposed respectively corresponding to the first gate electrode and the second gate electrode;
• a first oxide semiconductor layer and a second oxide semiconductor layer, disposed on the second insulating layer and respectively corresponding to the first gate electrode and the second gate electrode;
• and
• a first electrode and a second electrode, oppositely disposed on the first oxide semiconductor layer and the second oxide semiconductor layer respectively, wherein the first electrode is electrically connected to the second gate electrode, the first oxide semiconductor layer, and the second oxide semiconductor layer;
• the second electrode is electrically connected to the first gate electrode, the first oxide semiconductor layer, and the second oxide semiconductor layer;
• the first electrode comprises a first electrode portion, a second electrode portion, a first connection portion, and a second connection portion;
• and the second electrode portion comprises a third electrode portion, a fourth electrode portion, a third connection portion, and a fourth connection portion.

An active device comprising:

• a poly-silicon semiconductor layer, having a first doped region, a channel region and a second doped region;
• a gate electrode disposed over the poly-silicon semiconductor layer;
• at least one insulating layer covering the gate electrode and the poly-silicon semiconductor layer, and having a first through hole;
• an oxide semiconductor layer, disposed on the at least one insulating layer;
• and
• a first electrode and a second electrode, disposed on the oxide semiconductor layer, wherein the oxide semiconductor layer is electrically connected to the second electrode, and wherein the second electrode is electrically connected to the second doped region via the first through hole.