Non-volatile memory device
AssigneeToshiba Memory Corporation
InventorsTadayoshi Uechi, Masaki Kondo
Life of this patent
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Abstract
A non-volatile memory device includes a conductive layer, a first electrode layer provided side by side with the conductive layer in a first direction, a second electrode layer provided between the conductive layer and the first electrode. At least a part of the second electrode on the conductive layer side has a work function smaller than a work function of the first electrode. The device further includes a first channel body extending through the first electrode layer in the first direction and a charge storage portion provided between the first electrode layer and the first channel body.
Claims17
A non-volatile memory device comprising:
- a source layer;
- a first electrode layer stacked on the source layer in a first direction;
- a second electrode layer provided between the source layer and the first electrode layer, the second electrode layer including a first layer and a second layer stacked in the first direction, the first layer being provided between the source layer and the second layer, wherein the first layer has a work function smaller than a work function of the first electrode layer, and the second layer has a work function larger than the work function of the first layer;
- a first channel body extending through the first electrode layer in the first direction;
- and
- a charge storage portion provided between the first electrode layer and the first channel body.
Dependencies are inferred from the claim text.