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US 9,793,287 B2Granted
Semiconductor wafer with first and second stacked bodies and semiconductor memory device
AssigneeToshiba Memory Corporation
InventorTadashi Iguchi
Life of this patent
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Abstract
A semiconductor wafer including first and second stacked bodies provided on separate parts of a substrate. The first stacked body includes a first insulating and a second insulating film being provided on the first portion, the second stacked body includes a plurality of third insulating films and a plurality of electrode films. The third insulating films and the electrode films are alternately stacked, and a shape of an end portion of the second stacked body on a side opposing to the first stacked body is a stepped pattern.
Claims8
A semiconductor wafer comprising:
- a substrate;
- a first stacked body being provided on a part of the substrate;
- and
- a second stacked body being provided on another part of the substrate, the second stacked body being provided separately from the first stacked body in a first direction,
- the first stacked body including:
- a first insulating film being provided on the part of the substrate, the first insulating film including a first portion, a second portion, and a third portion, the second portion being arranged with the first portion in the first direction, the third portion being provided between the first portion and the second portion, a thickness of each of the first portion and the second portion being thicker than a thickness of the third portion;
- and
- a second insulating film being provided on the first portion, the third portion, and at least a part of the second portion, the second insulating film including an upper surface, the upper surface having a depression overlapping the third portion when projected over a plane including the first direction and a second direction intersecting the first direction,
- the second stacked body including a plurality of third insulating films and a plurality of electrode films, the third insulating films and the electrode films being alternately stacked,
- a shape of an end portion of the second stacked body on a side opposing to the first stacked body being a stepped pattern.
7 more elements
A semiconductor memory device comprising:
- a substrate;
- a first stacked body being provided on a part of the substrate;
- and
- a second stacked body being provided on another part of the substrate by being provided separately from the first stacked body in a first direction,
- the first stacked body including:
- a first insulating film being provided on the part of the substrate, the first insulating film including a first portion, a second portion, and a third portion, the second portion being arranged with the first portion in the first direction, the third portion being provided between the first portion and the second portion, a thickness of each of the first portion and the second portion being thicker than a thickness of the third portion;
- and
- a second insulating film being provided on the first portion, the third portion, and at least a part of the second portion, the second insulating film including an upper surface, the upper surface having a depression overlapping the third portion when projected over a plane including the first direction and a second direction intersecting the first direction,
- the second stacked body including a plurality of third insulating films and a plurality of electrode films, the third insulating films and the electrode films being alternately stacked,
- a shape of an end portion of the second stacked body on a side opposing to the first stacked body being a stepped pattern,
- a side surface of the first stacked body on an opposite side of the second stacked body and a side surface of the substrate locating on a same surface.
8 more elements
Dependencies are inferred from the claim text.