US 9,793,138 B2 · Thermal processing method for wafer

Abstract

The present invention relates to a thermal processing method for wafer. A wafer is placed in an environment filled with a non-oxygenated gas mixture comprising deuterium gas and at least one kind of low active gas, and a rapid heating processing process is performed on a surface of the wafer to heat the wafer to a predetermined high temperature. Then, the wafer is placed in an environment filled with an oxygenated gas mixture, and a rapid cooling processing process is performed on a surface of the wafer. As a result, a denuded zone is formed on the surface of the wafer, deuterium atoms, which may be released to improve characteristics at an interface of semiconductor devices in a later fabrication process, are held in the wafer, and bulk micro-defects are formed far from the semiconductor devices.

Claims12

Dependent claims

A thermal processing method for wafer, comprising:

placing at least one wafer in an environment filled with a non-oxygenated gas mixture comprising deuterium gas and at least one kind of low active gas, and performing a rapid heating process on a surface of the least one wafer to heat the least one wafer to a predetermined high temperature;
and
after the least one wafer's reaching the predetermined high temperature, placing the least one wafer in an environment filled with an oxygenated gas mixture, and performing a rapid cooling process on a surface of the least one wafer;
wherein the predetermined high temperature falls within 1200° C. to 1400° C.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

15/268,006Filed 16 Sep 2016

Priority

CN 2016 1 01205623 Mar 2016

Published

US 2017/0256420 A17 Sep 2017

Granted

17 Oct 2017

Term ends

Not estimatedThe source records don’t support an estimate.

Classification4 codes

H10P 36/20
Gettering within semiconductor bodies: intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body
H10P 90/12
Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement: preparing bulk and homogeneous wafers
H10P 95/94
Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass: hydrogenation or deuterisation,…
H10P
Generic processes or apparatus for the manufacture or treatment of devices covered

Thermal processing method for wafer

Life of this patent

Thermal processing method for wafer

Life of this patent

Abstract

Claims12