Reactor and method for production of silicon by chemical vapor deposition

A method for manufacture of solid silicon by chemical vapour deposition (CVD), the method comprising:

• constantly rotating a reactor around an axis, the reactor containing particles imported to or produced in the reactor to produce a loose particle layer on an inner reactor wall of, wherein the inner reactor wall is non-parallel to the axis;
• importing silicon-containing reaction gas for the CVD;
• rotating the reactor and heating the inner reactor wall while producing solid silicon by the CVD on an inside of the loose particle layer;
• loosening the solid silicon from the loose particle layer;
• and
• taking the solid silicon out and carrying out any preparation of an inner surface of the reactor before repeating the steps of the method.

A method of manufacture of solid silicon by chemical vapour deposition (CVD), the method comprising:

• producing silicon via a reactor comprising:
• a reactor body;
• a rotation device operatively arranged to the reactor, wherein the rotation device is configured to constantly rotate the reactor around an axis during production of the solid silicon by CVD;
• at least one sidewall that surrounds the reactor body and is non-parallel to the axis;
• at least one inlet for silicon-containing reaction gas;
• at least one outlet for residual gas;
• a temperature control appliance consisting essentially of a heat appliance operatively arranged to the reactor, wherein the heat appliance is configured to heat the at least one sidewall;
• a loose particle layer on an inner surface of the at least one sidewall, the loose particle layer being held in place by rotation of the reactor body during the manufacture of solid silicon by the CVD;
• and
• wherein the CVD of solid silicon takes place on the loose particulate layer.