US 9,755,082 B2 · Semiconductor device including oxide semiconductor with an insulating film including galliium and oxygen

Abstract

One object is to provide a semiconductor device including an oxide semiconductor with improved electrical characteristics. The semiconductor device includes a first insulating film including an element of Group 13 and oxygen; an oxide semiconductor film partly in contact with the first insulating film; a source electrode and a drain electrode electrically connected to the oxide semiconductor film; a gate electrode overlapping with the oxide semiconductor film; and a second insulating film partly in contact with the oxide semiconductor film, between the oxide semiconductor film and the gate electrode. Further, the first insulating film including an element of Group 13 and oxygen includes a region where an amount of oxygen is greater than that in a stoichiometric composition ratio.

Claims16

Dependent claims

A semiconductor device comprising:

a gate electrode;
a first insulating film including gallium and oxygen over the gate electrode;
an oxide semiconductor film over the first insulating film;
and
a second insulating film including gallium and oxygen over the oxide semiconductor film,
wherein the first insulating film is in contact with a first face of the oxide semiconductor film,
wherein the second insulating film is in contact with a second face of the oxide semiconductor film,
wherein the first insulating film is a gallium oxide film, and
wherein the second insulating film is a gallium oxide film.

6 more elements

Dependencies are inferred from the claim text.

Semiconductor device including oxide semiconductor with an insulating film including galliium and oxygen

Life of this patent

Semiconductor device including oxide semiconductor with an insulating film including galliium and oxygen

Life of this patent

Abstract

Claims16