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US 9,753,218 B2Granted
Semiconductor device with integrated mirror and method of producing a semiconductor device with integrated mirror
AssigneeAms AG
InventorsJochen Kraft, Joerg Siegert, Ewald Stueckler
Life of this patent
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Abstract
The semiconductor device comprises a substrate (1) of semiconductor material, a dielectric layer (2) above the substrate, a waveguide (3) arranged in the dielectric layer, and a mirror region (4) arranged on a surface of a mirror support (5) integrated on the substrate. A mirror is thus formed facing the waveguide. The surface of the mirror support and hence the mirror are inclined with respect to the waveguide.
Claims13
A semiconductor device, comprising:
- a substrate of semiconductor material;
- a dielectric layer above the substrate;
- a waveguide arranged in the dielectric layer;
- a mirror support arranged level with the waveguide, the mirror support comprising a surface that is inclined with respect to the waveguide;
- the mirror support being a high-density plasma deposited oxide;
- and
- a mirror region being arranged on the surface of the mirror support, the mirror region forming a mirror facing the waveguide and being inclined with respect to the waveguide,
- wherein the waveguide extends in a plane, and the surface of the mirror support is inclined with respect to the plane by an angle of inclination between 40° and 50°,
- wherein the mirror region is a filling of an opening of the dielectric layer, and is located between the dielectric layer and the mirror support,
- wherein the filling comprises a higher index of refraction than the mirror support,
- wherein the mirror support is a silicon oxide, and
- wherein the filling is silicon.
9 more elements
A method of producing a semiconductor device, comprising:
- arranging a waveguide in a dielectric layer on a substrate of semiconductor material;
- forming an opening in the dielectric layer;
- forming a mirror support in the opening, the mirror support comprising a surface that is inclined with respect to the waveguide;
- and
- arranging a mirror region on the surface of the mirror support, thus forming a mirror,
- wherein the waveguide extends in a plane, and the surface of the mirror support is inclined with respect to the plane by an angle of inclination between 40° and 50°,
- wherein the mirror support is formed by a high-density plasma deposition of silicon oxide, and
- wherein after forming the mirror support, the mirror region is formed by an epitaxial growth of silicon, thus covering the inclined surface of the mirror support and filling the opening.
5 more elements
A method of producing a semiconductor device, comprising:
- arranging a waveguide in a dielectric layer on a substrate of semiconductor material;
- forming an opening in the dielectric layer;
- forming a mirror support in the opening, the mirror support comprising a surface that is inclined with respect to the waveguide;
- and
- arranging a mirror region on the surface of the mirror support, thus forming a mirror,
- wherein the waveguide extends in a plane, and the surface of the mirror support is inclined with respect to the plane by an angle of inclination between 40° and 50°,
- wherein the mirror support is formed by a high-density plasma deposition of silicon oxide, and
- wherein after forming the mirror support, the mirror region is formed by a deposition of polysilicon on the surface of the mirror support, thus filling the opening.
5 more elements
Dependencies are inferred from the claim text.