Inspection method for semiconductor substrate, manufacturing method of semiconductor device and inspection device for semiconductor substrate

An inspection method for a semiconductor substrate, the method comprising:

• heating the semiconductor substrate;
• measuring a first characteristic by bringing a plurality of probes into contact with the heated semiconductor substrate and making a first electric current flow in the semiconductor substrate;
• and
• measuring a second characteristic, after the measuring of the first characteristic, by bringing a plurality of probes into contact with the heated semiconductor substrate and making a second electric current flow in the semiconductor substrate, wherein a number of the plurality of probes used in the measuring of the second characteristic is larger than a number of the plurality of probes used in the measuring of the first characteristic, and the second electric current is larger than the first electric current,
• wherein the semiconductor substrate includes a semiconductor layer and a diode which is laminated above the semiconductor layer via an insulation film, and
• the first characteristic is a forward voltage drop of the diode.

An inspection device for a semiconductor substrate, the device comprising:

• a stage on which the semiconductor substrate is mounted;
• a heater that heats the semiconductor substrate mounted on the stage;
• a probe card including a plurality of first probes and a plurality of second probes, wherein the probe card is located above the stage such that tips of the first and second probes face the stage, and when the probe card is located above the stage the tips of the first probes are closer to the stage than the tips of the second probes;
• and
• a controller configured to perform measurement of a first characteristic and measurement of a second characteristic in this order,
• wherein the controller is configured to perform:
• measuring the first characteristic by bringing the first probes into contact with the semiconductor substrate on the stage while not bringing the second probes into contact with the semiconductor substrate on the stage and by making a first electric current flow in the semiconductor substrate;
• and
• measuring the second characteristic by bringing the first and second probes into contact with the semiconductor substrate on the stage and by making a second electric current flow in the semiconductor substrate, wherein the second electric current is larger than the first electric current.