US 9,753,001 B1 · Polymer nanofiber based reversible nano-switch/sensor diode (nanoSSSD) device

Abstract

A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one polymer nanofiber deposited on the electrode. The at least one polymer nanofiber provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

Claims20

Dependent claims

A nanostructure device comprising:

a doped semiconducting substrate;
an insulating layer disposed on the doped semiconducting substrate;
an electrode formed on the insulating layer;
and
at least one polymer nanofiber deposited on the electrode and providing an electrical connection between the electrode and the substrate, wherein the nanostructure device is adapted to perform dual functions as a nano-switching/sensing device.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

14/672,673Filed 30 Mar 2015 · continuation in part

Priority

23 Sep 2011

Granted

5 Sep 2017

Term ends

Not estimatedThe source records don’t support an estimate.

Classification13 codes

G01N 27/129
Of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid , for detecting components in…:…
H10D 8/051
Manufacture or treatment: of Schottky diodes
H10D 8/60
Diodes: schottky-barrier diodes
H10D 62/8303
Being Group IV materials, e.g. B-doped Si or undoped Ge: diamond

Polymer nanofiber based reversible nano-switch/sensor diode (nanoSSSD) device

Life of this patent

Polymer nanofiber based reversible nano-switch/sensor diode (nanoSSSD) device

Life of this patent

Abstract

Claims20