Transistor-type viscosity sensor, and viscosity measurement system and viscosity measuring method using the same

A transistor-type viscosity sensor, for measuring the viscosity of a fluid with a dipole moment, the transistor-type viscosity sensor comprising:

• a semiconductor structure, comprising a GaN layer and an AlGaN layer disposed on the GaN layer;
• a source terminal, in ohmic contact with the AlGaN layer;
• and
• a drain terminal, in ohmic contact with the AlGaN layer;
• wherein the portion of the semiconductor structure that is between the source terminal and the drain terminal has a gate region, the gate region having an exposed surface for being in contact with the fluid with the dipole moment;
• wherein when the exposed surface of the gate region is in contact with the fluid with the dipole moment, a fluctuation of the current that is flowing in the semiconductor structure is generated by the molecular motions of the fluid with the dipole moment.

A viscosity measuring method, for measuring the viscosity of a fluid with a dipole moment, the viscosity measuring method comprising the steps of:

• providing a transistor-type viscosity sensor,
• wherein the transistor-type viscosity sensor comprises a semiconductor structure, a source terminal, and a drain terminal, the semiconductor structure includes a GaN layer and an AlGaN layer disposed on the GaN layer, the source terminal and the drain terminal respectively are in ohmic contact with the AlGaN layer, the portion of the semiconductor structure that is between the source terminal and the drain terminal has a gate region, and the gate region has an exposed surface;
• putting the fluid with the dipole moment into contact with the exposed surface of the gate region;
• measuring an electronic signal of the semiconductor structure;
• and
• determining the viscosity of the fluid with the dipole moment according to the electronic signal measured.