MEMS pressure sensor with thermal compensation

An electronic device comprising a semiconductor device, the semiconductor device comprising:

• a substrate;
• an interlayer dielectric layer on the substrate;
• a bottom electrode of a pressure sensor within the interlayer dielectric layer;
• a pressure sensing cavity above the bottom electrode;
• a sensing film above the pressure sensing cavity and covering a portion of the interlayer dielectric layer;
• a cover layer on the interlayer dielectric layer and on the sensing film, the cover layer having an opening exposing a portion of the sensing film;
• a high thermal expansion coefficient material layer disposed on the cover layer and sidewalls of the opening while leaving a central portion of the opening uncovered so that a central portion of the exposed portion of the sensing film remains exposed, the high thermal expansion coefficient material layer having a high thermal expansion coefficient higher than a thermal expansion coefficient of the sensing film, wherein the exposed central portion is not covered by any other layer.