Device and method for processing wafers

A device for processing substrate pairs, wherein each substrate pair is comprised of first and second substrates, the device comprising,

• a first pretreatment module for pretreatment of the first substrate of the substrate pair before primary treatment in at least one primary treatment module, the first pretreatment module including a first pretreatment chamber which forms a first pretreatment space, and a first lock door moveable between an open state and a closed state,
• a second pretreatment module for pretreatment of the second substrate of the substrate pair before primary treatment in the at least one primary treatment module, the second pretreatment module including a second pretreatment chamber which forms a second pretreatment space, and a second lock door moveable between an open state and a closed state,
• said at least one primary treatment module for primary treatment of the substrate pair having a primary treatment chamber which forms a primary treatment space, wherein primary treatment of the substrate pair includes bringing the first and second substrates of the substrate pair into contact with each other and bonding the first and second substrates together while the first and second pretreatment modules are loaded with further substrates, said at least one primary treatment module including a heating apparatus for heating the primary treatment chamber to a temperature that is greater than 250° C. during bonding of the first and second substrates,
• a first primary lock door located between the first pretreatment chamber and the primary treatment chamber, said first primary lock door movable between an open state and a closed state and said first primary lock door forming a vacuum-tight connection between the primary treatment chamber and the first pretreatment chamber in the closed state,
• a second primary lock door located between the second pretreatment chamber and the primary treatment chamber, said second primary lock door moveable between an open state and a closed stated and said second primary lock door forming a vacuum-tight connection between the primary treatment chamber and the second pretreatment chamber in the closed state,
• at least one aftertreatment module for aftertreatment of the substrate pair, the at least one aftertreatment module having:
• an aftertreatment chamber which forms an aftertreatment space, and
• a third lock door movable between an open state and a closed state,
• a third primary lock door located between the primary treatment space and the aftertreatment space, said third primary lock door movable between an open state and a closed state and said third primary lock door forming a vacuum-tight connection between the primary treatment chamber and the aftertreatment chamber in the closed state, and
• a central control apparatus for controlling operation of one or more pressurization apparatus to independently control pressure in the first and second pretreatment spaces, the primary treatment space, and the aftertreatment space, and for controlling movement of the first lock door, the first primary lock door, the second lock door, the second primary lock door, the third lock door, and the third primary lock door, between the open state and the closed state.