Substrate processing method, program, computer-readable storage medium, and substrate processing system
AssigneeTokyo Electron Limited
InventorHidetami Yaegashi
Life of this patent
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Abstract
A substrate processing method performs a photolithography processing on a wafer to form a resist pattern on the wafer. Ultraviolet ray is irradiated onto the resist pattern to cut side chains of the resist pattern to improve line edge roughness of the resist pattern. A processing agent is caused to enter the resist pattern and a metal is caused to be infiltrated into the resist pattern through the processing agent. Thereafter, the wafer is heated to vaporize the processing agent from the resist pattern to form a cured resist pattern.
Claims20
A substrate processing method comprising:
- a resist pattern forming process of forming a resist pattern on a substrate by performing a photolithography processing on the substrate;
- a side chain cutting process of cutting side chains of the resist pattern by irradiating energy ray on the resist pattern;
- and
- a metal processing process of causing a processing agent to enter the resist pattern whose side chains have been cut, and causing a metal to be infiltrated into the resist pattern through the processing agent.
A substrate processing system comprising:
- a developing apparatus configured to perform a development processing on a resist film after an exposure apparatus to form a resist pattern on a substrate;
- an energy ray irradiation apparatus configured to irradiate energy ray onto the resist pattern to cut side chains of the resist pattern;
- and
- a metal processing apparatus configured to cause a processing agent to enter the resist pattern and to cause a metal to be infiltrated into the resist pattern through the processing agent.
Dependencies are inferred from the claim text.