Controlling reverse conducting IGBT
AssigneeInfineon Technologies AG
InventorsJohannes Georg Laven, Heiko Rettinger, Roman Baburske
Life of this patent
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Abstract
A method for controlling a first switch and a second switch is suggested, wherein each switch is an RC-IGBT and wherein both switches are arranged as a half-bridge circuit. The method includes: controlling the first switch in an IGBT-mode; controlling the second switch such that it becomes desaturated when being in a DIODE-mode; wherein controlling the second switch starts before and lasts at least as long as the first switch changes its IGBT-mode from blocking state to conducting state.
Claims21
A method for controlling a first switch and a second switch, wherein each switch is an RC-IGBT and wherein both switches are arranged as a half-bridge circuit, the method comprising:
- controlling the first switch in an IGBT-mode;
- controlling the second switch such that it becomes desaturated when being in a DIODE-mode;
- wherein controlling the second switch starts before and lasts at least as long as the first switch changes its IGBT-mode from blocking state to conducting state,
- wherein the first switch and the second switch are controlled in a pulse-width-modulation at a switching frequency that is higher than a frequency of a load current.
A device for operating a first switch and a second switch, wherein each switch is an RC-IGBT and wherein both switches are arranged as a half-bridge circuit, said device comprising a processing unit configured to:
- control the first switch in an IGBT-mode;
- control the second switch such that it becomes desaturated when being in a DIODE-mode;
- wherein control of the second switch starts before and lasts at least as long as the first switch changes its IGBT-mode from blocking state to conducting state,
- wherein the first switch and the second switch are controlled in a pulse-width-modulation at a switching frequency that is higher than a frequency of a load current.
A device for controlling a first switch and a second switch, wherein each switch is an RC-IGBT and wherein both switches are arranged as a half-bridge circuit, the device comprising:
- means for controlling the first switch in an IGBT-mode;
- means for controlling the second switch such that it becomes desaturated when being in a DIODE-mode;
- wherein controlling the second switch starts before and lasts at least as long as the first switch changes its IGBT-mode from blocking state to conducting state,
- wherein the first switch and the second switch are controlled in a pulse-width-modulation at a switching frequency that is higher than a frequency of a load current.
Dependencies are inferred from the claim text.