Method of patterning block copolymer layer and patterned structure

A method of patterning a block copolymer layer, the method comprising:

• providing a substrate with a guide pattern formed on a surface thereof;
• forming a block copolymer layer on the substrate with the guide pattern, the block copolymer layer comprising a block copolymer;
• and
• directing self-assembly of the block copolymer on the substrate according to the guide pattern to form n/2 discrete domains,
• wherein
• the guide pattern includes a block copolymer patterning area having a 90-degree bending portion,
• an outer apex and an inner apex of the 90-degree bending portion are each rounded,
• the outer apex has a first curvature radius r1,
• the inner apex has a second curvature radius r2, and
• a width of the block copolymer patterning area W, the first curvature radius r1, and the second curvature radius r2 satisfy Inequation 1:
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• Inequation
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• wherein n is an even number and represents a number of interfaces of the discrete domains,
• wherein the guide pattern comprises at least two bend pattern elements arranged parallel to one another, at least two jog pattern elements arranged parallel to one another, or a combination thereof,
• wherein the block copolymer patterning area is defined by opposite side walls formed by the pattern elements,
• wherein the width (W) of the block copolymer patterning area is a distance between the opposite side walls in a straight line portion of the guide pattern, and
• wherein the discrete domains are formed in the block copolymer patterning area.