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US 9,543,466 B2Granted
Method for forming shield tunnels in single-crystal substrates
AssigneeDisco Corporation
InventorHiroshi Morikazu
Life of this patent
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Abstract
A method of processing a single-crystal member includes setting the peak energy density of a pulsed laser beam to a value in a range from 1 TW/cm2 to 100 TW/cm2, and applying the pulsed laser beam to the single-crystal member while positioning a converged point of the pulsed laser beam at a predetermined position spaced from an upper side of the single-crystal member to grow a fine hole and a amorphous region shielding the fine hole from the upper side of the single-crystal member, thereby forming a shield tunnel in the single-crystal member.
Claims2
A method of processing a single-crystal member, comprising:
- setting a peak energy density of a pulsed laser beam to a value in a range from 1 TW/cm2 to 100 TW/cm2;
- and
- applying the pulsed laser beam to the single-crystal member while positioning a converged point of the pulsed laser beam at a predetermined position spaced from an upper side of the single-crystal member to grow a fine hole and an amorphous region shielding the fine hole from the upper side of the single-crystal member, thereby forming a shield tunnel in the single-crystal member.
Dependencies are inferred from the claim text.