Back to results
US 9,543,182 B2Granted
Electrostatic chuck and method of manufacturing semiconductor device
AssigneeSumitomo Electric Industries, Ltd.
InventorsAkira Furuya, Takamitsu Kitamura
Life of this patent
Estimating the term…
Abstract
An electrostatic chuck device including: a plurality of adsorption areas having an electrode generating electrostatic attractive force; and a control portion controlling the electrostatic attractive force against each of the plurality of the adsorption areas independently of other adsorption areas.
Claims13
A method of manufacturing a semiconductor device comprising:
- adsorbing a plurality of first semiconductor chips periodically arrayed at a first interval with use of a first substrate including an electrostatic chuck device, protective films being formed on surfaces of the plurality of first semiconductor chips respectively;
- reducing adsorbing force against a plurality of second semiconductor chips among the plurality of first semiconductor chips periodically located at a second interval that is larger than the first interval by controlling adsorbing force of the first substrate;
- picking up simultaneously the plurality of second semiconductor chips through the protective films against which the adsorbing force was reduced;
- adhering simultaneously the plurality of second semiconductor chips to a second substrate;
- and
- removing the protective films from the plurality of second semiconductor chips after adhering simultaneously the plurality of second semiconductor chips to the second substrate,
- wherein the electrostatic chuck device comprises:
- a plurality of non-overlapping and predefined adsorption areas formed on a surface of said electrostatic chuck device, each of said plurality of adsorption areas comprising a plurality of first electrodes and a plurality of second electrodes alternately provided, each of the plurality of adsorption areas adsorbing a single first semiconductor chip, the plurality of adsorption areas being periodically arrayed in a matrix at the first interval;
- a first wiring electrically coupling between the plurality of first electrodes in an identical absorption area, the plurality of first electrodes of one of the plurality of adsorption areas being electrically isolated from the plurality of first electrodes of other adsorption areas;
- a second wiring electrically coupling between the plurality of second electrodes in the identical adsorption area, the plurality of second electrodes of one of the plurality of adsorption areas being electrically isolated from the plurality of second electrodes of other adsorption areas;
- and
- a control portion configured to control an electrostatic attractive force of each of the plurality of adsorption areas independently of other adsorption areas by applying a positive voltage and a negative voltage respectively to the first wiring and the second wiring of each of the plurality of adsorption areas independently of other adsorption areas.
9 more elements
A method of manufacturing a semiconductor device comprising:
- picking up simultaneously a plurality of first semiconductor chips periodically arrayed at a first interval through protective films respectively from a plurality of second semiconductor chips, of which the protective films are formed on surfaces, periodically arrayed at a second interval smaller than the first interval with use of an electrostatic chuck device;
- adhering simultaneously the plurality of first semiconductor chips to a second substrate;
- and
- removing the protective films from the plurality of first semiconductor chips after adhering simultaneously the plurality of first semiconductor chips to the second substrate,
- wherein the electrostatic chuck device comprises:
- a plurality of non-overlapping and predefined adsorption areas formed on a surface of said electrostatic chuck device, each of said plurality of adsorption areas comprising a plurality of first electrodes and a plurality of second electrodes alternately provided, each of the plurality of adsorption areas adsorbing a single second semiconductor chip, the plurality of adsorption areas being periodically arrayed in a matrix at the second interval;
- a first wiring electrically coupling between the plurality of first electrodes in an identical adsorption area, the plurality of first electrodes of one of the plurality of adsorption areas being electrically isolated from the plurality of first electrodes of other adsorption areas;
- a second wiring electrically coupling between the plurality of second electrodes in the identical adsorption area, the plurality of second electrodes of one of the plurality of adsorption areas being electrically isolated from the plurality of second electrodes of other of adsorption areas;
- and
- a control portion configured to control an electrostatic attractive force of each of the plurality of adsorption areas independently of other adsorption areas by applying a positive voltage and a negative voltage respectively to the first wiring and the second wiring of each of the plurality of adsorption areas independently of other adsorption areas.
7 more elements
Dependencies are inferred from the claim text.