Back to results
US 9,540,744 B2Granted
Apparatus for fabricating silicon carbide single crystal ingot and method for fabricating ingot
AssigneeLG Innotek Co., Ltd.
InventorsDong Geun Shin, Chang Hyun Son
Life of this patent
Estimating the term…
Abstract
An apparatus for fabricating an ingot according to the embodiment comprises a crucible for receiving a raw material; and a filter part for selectively filtering a specific component in the crucible, wherein the filter part comprises a polymer.
Claims20
An apparatus for fabricating a silicon carbide single crystal ingot, the apparatus comprising:
- a crucible receiving a raw material;
- a filter part selectively filtering a specific component of the raw material into the crucible,
- wherein the filter part comprises a first filter member on the raw material and a second filter member surrounding an inner wall of the crucible, and the first filter member and the second filter member are integrally formed with each other,
- wherein the second filter member is disposed on the raw material,
- wherein the filter part comprises a first layer and a second layer on the first layer,
- wherein the filter part is porous,
- wherein a size of pores of the first layer is different from a size of pores of the second layer, and
- wherein the specific component passing through the filter part comprises SiC2, Si2C, or Si.
5 more elements
A method for fabricating a silicon carbide single crystal ingot, the method comprising:
- preparing a crucible receiving a raw material;
- preparing a filter part selectively filtering a specific component of the raw material into the crucible;
- and
- growing an ingot from the raw material,
- wherein the raw material passes through the filter part during the growing of the ingot,
- wherein the filter part comprises a first filter member on the raw material and a second filter member surrounding an inner wall of the crucible, and the first filter member and the second filter member are integrally formed with each other,
- wherein the second filter member is disposed on the raw material,
- wherein the filter part comprises a first layer and a second layer on the first layer,
- wherein the filter part is porous,
- wherein a size of pores of the first layer is different from a size of pores of the second layer,
- wherein the specific component passing through the filter part comprises SiC2, Si2C, or Si, and
- wherein the ingot comprises a silicon carbide single crystal ingot.
9 more elements
Dependencies are inferred from the claim text.