Deposition of metal films based upon complementary reactions
AssigneeWayne State University
InventorCharles H. Winter
Life of this patent
Estimating the term…
Abstract
A method comprises contacting a compound having formulae (1) with a compound having formula MLo to form a metal: [M(SiR3)m(L1)p]n (1) wherein M is Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Al, a second row transition metal or a third row transition metal; R are each independently H, C1-C6 alkyl or —Si(R″)3; R″ are each independently H or C1-C6 alkyl; m is an integer from 1 to 3; n is a number representing the formation of aggregates or polymeric material; L1 is a neutral donor ligand; L is a ligand; p is an integer from 0 to 6; and o is an integer representing the number of ligands bonded to MLo.
Claims32
A method for forming a metal, the method comprising:
- contacting a compound having formulae 1 or a surface modified with the compound having formula 1 with a compound having formula MLo to form a metal:
- [M(Si(R0)3)m)L1)p]n 1
- wherein
- M is Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Al, a second row transition metal or a third row transition metal;
- R0 are each independently H or C1-C6 alkyl;
- R″ are each independently H or C1-C6 alkyl;
- m is an integer from 1 to 6;
- n is a number representing formation of aggregates or polymeric material;
- L is a ligand;
- L1 is a neutral donor ligand;
- p is an integer from 0 to 6;
- and
- o is an integer representing the number of ligands bonded to MLo.
Dependencies are inferred from the claim text.