Method for producing a microelectronic device

A method for producing a microelectronic device comprising a substrate and a stack comprising at least one electrically conductive layer and at least one dielectric layer, the method comprising the following steps:

• forming, from one face of the substrate, at least one pattern in depression with respect to a plane of the face of the substrate, a wall of the pattern comprising a bottom part and a flank part, the flank part being situated between the bottom part and the face of the substrate, the flank part comprising at least one inclined wall as far as the face of the substrate,
• forming the stack, layers of the stack at least partially filling in the pattern, the forming of the stack being performed over the entire surface of the face of the substrate,
• thinning the stack at least as far as the plane of the face of the substrate so as to completely expose opposing edges of each of said at least one electrically conductive layer flush in one plane,
• after the thinning, forming at least one electrical connection member on the substrate in contact with one of the opposing edges of said at least one electrically conductive layer while completely leaving the one of the opposing edges of said at least one electrically conductive layer flush in said plane, wherein the step of forming an electrical connection member comprises:
• depositing an electrically insulating material on said one of the opposing edges of the electrically conductive layer of the stack, forming at least one opening in the electrically insulating material to provide an electrical contact point on said one of the opposing edges;
• and depositing an electrically conductive material to form the electrical connection member, said deposition being configured so as to pass through the at least one opening.