Manufacturable multi-emitter laser diode

A method for manufacturing a multi-emitter laser device, the method comprising:

• providing a substrate member having a surface region;
• forming an epitaxial material overlying the surface region, the epitaxial material comprising a release material, an n-type cladding region overlying the release material, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer;
• and an interface region overlying the p-type cladding region;
• forming a plurality of dice by at least patterning the epitaxial material and defining mesa regions to provide a plurality of epitaxial mesa dice regions, each pair of epitaxial mesa dice regions being characterized by a first pitch between the epitaxial mesa dice regions;
• subjecting the release material to an energy source to fully or partially remove the release material;
• bonding the interface region associated with at least one of the plurality of epitaxial mesa dice regions to a carrier wafer to form a bonded structure wherein at least a pair of bonded epitaxial mesa dice regions are arranged in a substantially parallel configuration on the carrier wafer with a lateral spacing defined by a second pitch;
• initiating a release of the substrate member to complete a transfer of the bonded epitaxial mesa dice regions to the carrier wafer to provide transferred epitaxial mesa dice regions on the carrier wafer at the second pitch;
• processing the transferred epitaxial mesa dice regions on the carrier wafer to form a plurality of laser stripe regions;
• processing the carrier wafer with the plurality of transferred epitaxial mesa dice regions comprising the plurality of laser stripe regions to form a plurality of laser diode regions each configured as a multi-emitter laser diode device;
• wherein a pair of the laser diode regions is spaced by a third pitch from an adjacent pair of the laser diode regions;
• and
• singulating each of the plurality of laser diode regions in the multi-emitter laser diode device to form individual laser diode devices.