Gallium and nitrogen containing laser device having confinement region

A method for fabricating a laser diode device comprising:

• providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material;
• an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material;
• and a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material;
• bonding the interface region to a handle substrate;
• and
• subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member;
• forming a ridge structure, and forming a second transparent conductive oxide material overlying an exposed portion of the n-type gallium and nitrogen containing material such that the active region is configured between the first transparent conductive oxide material and the second transparent conductive oxide material to cause an optical guiding effect within the active region.

A method for fabricating a laser diode device comprising:

• providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material;
• an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material;
• and a first transparent conductive oxide region overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide region;
• bonding the interface region to a handle substrate;
• and
• subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member;
• forming an n-type contact region overlying an exposed portion of the n-type gallium and nitrogen containing material;
• forming a patterned second transparent oxide region overlying a portion of the n-type contact region;
• and
• forming a metal material overlying the patterned second transparent oxide region.

A method for fabricating a laser diode device, the method comprising:

• providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material;
• an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material;
• and an interface region overlying the p-type gallium and nitrogen containing material;
• bonding the interface region to a handle substrate;
• and
• subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member, while maintaining attachment of the handle substrate via the interface region;
• and
• forming an n-type contact region overlying an exposed portion of the n-type gallium and nitrogen containing material;
• forming a patterned dielectric region overlying a portion of the n-type contact region;
• and forming a metal material overlying the patterned dielectric region;
• wherein the p-type gallium and nitrogen containing material is configured as a ridge waveguide structure to form a p-type ridge structure;
• wherein the patterned dielectric region is comprised of silicon oxide or silicon nitride.