CMOS band-pass filter

A band-pass filter, comprising:

• a CMOS resonator comprising a first reflector and a resonator cavity, the resonator cavity comprising:
• a substrate comprising a doped region and defining a first trench at a first end of the doped region and a second trench at a second end of the doped region opposite the first end, the first trench and the second trench having depths that exceed a depth of the doped region;
• and
• a first material, different than the substrate, disposed within the first trench and the second trench;
• and
• a first impedance converter.

A band-pass filter, comprising:

• a CMOS resonator comprising a first reflector and a resonator cavity, wherein:
• the resonator cavity comprises:
• a first material disposed within a first trench and a second trench defined by a substrate, the first material defining a first inner trench within the first trench and a second inner trench within the second trench;
• a second material disposed within first inner trench and the second inner trench;
• and
• a doped region of the substrate between the first trench and the second trench, wherein the doped region of the substrate contacts a first sidewall of the first material and an undoped region of the substrate contacts a second sidewall of the first material;
• and
• the first reflector comprises:
• the second material disposed within a third trench and a fourth trench defined by the substrate.