Patterning of organic semiconductor materials

A method of patterning a material on selected areas on a substrate surface, the method comprising:

• forming a solution of the material in a solvent;
• forming an immiscible mixture of the solution in a host liquid;
• and
• exposing the substrate surface to the mixture so that the solution selectively wets the selected areas.

A method for manufacturing organic semiconductor devices on a substrate having an array of electrode pairs, the method comprising:

• selectively wetting the electrode pairs with a solution of organic semiconductor material while a mechanical disturbance is applied to the solution, wherein selectively wetting the electrode pairs with a solution of organic semiconductor material includes introducing an organic semiconductor material to a surface of the substrate having lyophobic regions that are adjacent other regions including the electrode pairs, and using the lyophobic regions to mitigate the wetting of the substrate at the lyophobic regions, while wetting regions of the surface that include the electrode pairs;
• and
• precipitating the organic semiconductor material from the solution to bridge gaps between the electrodes in the electrode pairs;
• and applying the mechanical disturbance by applying a disturbance to generate shearing forces that are sufficient to mitigate wetting of the lyophobic regions and that are insufficient to mitigate wetting of the electrode pairs.

A method for manufacturing organic semiconductor devices on a substrate having an array of electrode pairs, the method comprising:

• selectively wetting the electrode pairs with a solution of organic semiconductor material while a mechanical disturbance is applied to the solution, wherein selectively wetting the electrode pairs with a solution of organic semiconductor material includes introducing an organic semiconductor material to a surface of the substrate having lyophobic regions that are adjacent other regions including the electrode pairs, and using the lyophobic regions to mitigate the wetting of the substrate at the lyophobic regions, while wetting regions of the surface that include the electrode pairs;
• and
• precipitating the organic semiconductor material from the solution to bridge gaps between the electrodes in the electrode pairs;
• and applying a disturbance to generate shearing forces that are sufficient to mitigate wetting of the lyophobic regions and sufficient to mitigate the formation of droplets covering at least two electrode pairs, and that are insufficient to mitigate wetting of individual electrode pairs.